Premium
2D Materials: 2D Tin Monoxide—An Unexplored p‐Type van der Waals Semiconductor: Material Characteristics and Field Effect Transistors (Adv. Electron. Mater. 4/2016)
Author(s) -
Saji Kachirayil J.,
Tian Kun,
Snure Michael,
Tiwari Ashutosh
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201670023
Subject(s) - materials science , semiconductor , van der waals force , field effect transistor , nanotechnology , field electron emission , tin , electron , optoelectronics , transistor , molecule , metallurgy , quantum mechanics , physics , voltage
Growth of a new van der Waals material—2D Tin Monoxide (SnO)—by using a pulsed laser deposition technique is reported by A. Tiwari and coworkers in article number 1500453. Such materials are promising candidates for developing next generation electronic devices. In their article, the authors demonstrate that the number of SnO monolayers can be precisely controlled by controlling the number of laser pulses during the deposition process.