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Quantum Capacitance: Negative Quantum Capacitance Effects in Metal–Insulator–Semiconductor Devices with Composite Graphene‐Encapsulated Gates (Adv. Electron. Mater. 4/2016)
Author(s) -
Tsipas Polychronis,
Giamini Sigiava Aminalragia,
MarquezVelasco Jose,
Kelaidis Nikolaos,
Tsoutsou Dimitra,
Aretouli Kleopatra E.,
Xenogiannopoulou Evangelia,
Evangelou Evangelos K.,
Dimoulas Athanasios
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201670019
Subject(s) - graphene , capacitance , materials science , quantum capacitance , transistor , optoelectronics , semiconductor , electron , nanotechnology , physics , electrode , quantum mechanics , voltage
In article number 1500297, P. Tsipas et al. present evidence that graphene incorporated into the gate of metal‐insulator‐semiconductor devices enhances the capacitance of these devices above its geometrical value. This is attributed to negative capacitance contributions due to electron correlation effects in graphene. As a consequence, it is expected that less bias at the input will be required to switch the transistors on, resulting in devices with improved energy efficiency.