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Flexible Ofets: Synergistic Effect of Regioregular and Regiorandom Poly(3‐hexylthiophene) Blends for High Performance Flexible Organic Field Effect Transistors (Adv. Electron. Mater. 2/2016)
Author(s) -
Chu PingHsun,
Wang Gang,
Fu Boyi,
Choi Dalsu,
Park Jung Ok,
Srinivasarao Mohan,
Reichmanis Elsa
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201670010
Subject(s) - materials science , fabrication , optoelectronics , transistor , dielectric , field effect transistor , semiconductor , active layer , nanotechnology , organic semiconductor , flexible electronics , layer (electronics) , thin film transistor , medicine , alternative medicine , pathology , voltage , physics , quantum mechanics
The fabrication of flexible OFETs by using UV irradiated RR/RRa‐P3HT blend thin films as the active layers is reported by Chu et al. in article number 1500384. The vertical phase separation of the components ensures formation of effective charge transport pathways, and the devices are well‐adapted to high bending strain. Furthermore, the top‐gate architecture enables the dielectric to serve as a self‐encapsulation layer to protect the underlying semiconductor from atmospheric oxygen and moisture, resulting in extended device operational life‐time.