Premium
Resistive Switching Memory: Nanoionic Resistive Switching Memories: On the Physical Nature of the Dynamic Reset Process (Adv. Electron. Mater. 1/2016)
Author(s) -
Marchewka Astrid,
Roesgen Bernd,
Skaja Katharina,
Du Hongchu,
Jia ChunLin,
Mayer Joachim,
Rana Vikas,
Waser Rainer,
Menzel Stephan
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201670006
Subject(s) - reset (finance) , materials science , diffusion , resistive random access memory , protein filament , voltage , optoelectronics , ionic bonding , process (computing) , nanotechnology , ion , electrical engineering , computer science , composite material , physics , thermodynamics , engineering , operating system , quantum mechanics , financial economics , economics
Marchewka et al. investigate the reset kinetics of TaO x ‐based nano‐crossbars using time‐resolved voltage‐pulse measurements in the sub‐μs regime and numerical simulations in article number 1500233. The advanced simulation model of nonisothermal electronic‐ionic drift‐diffusion allows for studying donor migration and related filament evolution in the oxide layer, thus identifying the balance between donor drift and diffusion as the root cause of the gradual reset behavior.