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Electron Transport and Nanomorphology in Solution‐Processed Polymeric Semiconductor n‐Doped with an Air‐Stable Organometallic Dimer
Author(s) -
Zhang Yuan,
Phan Hung,
Zhou Huiqiong,
Zhang Xuning,
Zhou Jiyu,
Moudgil Karttikay,
Barlow Stephen,
Marder Seth R.,
Facchetti Antonio,
Nguyen ThucQuyen
Publication year - 2017
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201600546
Subject(s) - dopant , materials science , doping , schottky diode , semiconductor , electron mobility , organic semiconductor , electron transport chain , optoelectronics , nanotechnology , chemical physics , diode , chemistry , biochemistry
This study investigates electron transport and distribution of an organometallic dimer‐based dopant (RuCp*Mes)2 in benchmarked P(NDI2OD‐T2) films, in which electron transport is not affected by deep traps originating from atmospheric contaminants. The electron mobility of P(NDI2OD‐T2) can be enhanced by >10‚ in diodes with reduced thermal activation energy using (RuCp*Mes)2 dopants, which is rationalized by the filling up of tail electronic states by doping induced carriers. n‐doping with (RuCp*Mes)2 can also improve electron injection at Schottky contacts in nanoscale transport measurements confirmed by conducting atomic force microscopy. The results suggest that the (RuCp*Mes)2 dopants are homogenously distributed throughout the P(NDI2OD‐T2) film, at least laterally, at moderate doping concentrations. Thus, these results demonstrate an opportunity of using air‐stable molecular n‐doping to modulate charge transport properties for solution‐processed organic optoelectronic devices.