High‐Performance Amorphous InGaZnO Thin‐Film Transistors via Staked Ultrathin High‐k TaO  x   Buffer Layer Grown on Low‐k SiO 2  Gate Oxide | Zendy

Kang Tae Sung | Zendy; Yoon Kap Soo | Zendy; Baek Gwang Ho | Zendy; Ko Won Bae | Zendy; Yang Seung Mo | Zendy; Yeon Bum Mo | Zendy; Hong Jin Pyo | Zendy

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High‐Performance Amorphous InGaZnO Thin‐Film Transistors via Staked Ultrathin High‐k TaO x Buffer Layer Grown on Low‐k SiO 2 Gate Oxide

Author(s) -

Kang Tae Sung,

Yoon Kap Soo,

Baek Gwang Ho,

Ko Won Bae,

Yang Seung Mo,

Yeon Bum Mo,

Hong Jin Pyo

Publication year - 2017

Publication title -

advanced electronic materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.25

H-Index - 56

ISSN - 2199-160X

DOI - 10.1002/aelm.201600452

Subject(s) - materials science , thin film transistor , fabrication , amorphous solid , layer (electronics) , optoelectronics , transistor , oxide , nanotechnology , buffer (optical fiber) , computer science , electrical engineering , crystallography , telecommunications , engineering , chemistry , voltage , metallurgy , medicine , alternative medicine , pathology

Efficient reduction of interfacial defect states is achieved by using an intentionally controlled ultrathin TaO x buffer layer. This process allows for the fabrication of IGZO thin‐film transistors (TFTs) with highly enhanced performance. These results may open a new avenue for the development of high‐performance oxide‐based TFTs.

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