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High‐Performance Amorphous InGaZnO Thin‐Film Transistors via Staked Ultrathin High‐k TaO x Buffer Layer Grown on Low‐k SiO 2 Gate Oxide
Author(s) -
Kang Tae Sung,
Yoon Kap Soo,
Baek Gwang Ho,
Ko Won Bae,
Yang Seung Mo,
Yeon Bum Mo,
Hong Jin Pyo
Publication year - 2017
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201600452
Subject(s) - materials science , thin film transistor , fabrication , amorphous solid , layer (electronics) , optoelectronics , transistor , oxide , nanotechnology , buffer (optical fiber) , computer science , electrical engineering , crystallography , telecommunications , engineering , chemistry , voltage , metallurgy , medicine , alternative medicine , pathology
Efficient reduction of interfacial defect states is achieved by using an intentionally controlled ultrathin TaO x buffer layer. This process allows for the fabrication of IGZO thin‐film transistors (TFTs) with highly enhanced performance. These results may open a new avenue for the development of high‐performance oxide‐based TFTs.