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Frank–van der Merwe Growth versus Volmer–Weber Growth in Successive Stacking of a Few‐Layer Bi 2 Te 3 /Sb 2 Te 3 by van der Waals Heteroepitaxy: The Critical Roles of Finite Lattice‐Mismatch with Seed Substrates
Author(s) -
Heo Hoseok,
Sung Ji Ho,
Ahn JiHoon,
Ghahari Fereshte,
Taniguchi Takashi,
Watanabe Kenji,
Kim Philip,
Jo MoonHo
Publication year - 2017
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201600375
Subject(s) - stacking , materials science , nucleation , van der waals force , crystallography , layer (electronics) , lattice (music) , condensed matter physics , chemical physics , nanotechnology , thermodynamics , molecule , chemistry , physics , organic chemistry , acoustics
Different growth mechanisms of van der Waals heteroepitaxial 2D Bi 2 Te 3 /Sb 2 Te 3 stacking by choosing different substrates are reported. Sequential Bi 2 Te 3 /Sb 2 Te 3 stacking growth mode becomes layer‐by‐layer growth on h ‐BN substrates, and 3D island growth on SiO 2 /Si. Compressive strain in the h ‐BN substrates imposed by the lattice mismatch plays a crucial role to determine different growth modes in these 2D nucleation kinetics models.