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2D Insulator–Metal Transition in Aerosol‐Jet‐Printed Electrolyte‐Gated Indium Oxide Thin Film Transistors
Author(s) -
Xie Wei,
Zhang Xin,
Leighton Chris,
Frisbie C. Daniel
Publication year - 2017
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201600369
Subject(s) - thin film transistor , transistor , materials science , electrolyte , insulator (electricity) , optoelectronics , oxide , indium , thin film , nanotechnology , engineering physics , electrical engineering , physics , metallurgy , voltage , engineering , electrode , layer (electronics) , quantum mechanics
The authors report electronic transport characterization and 2D insulator–metal transition in aerosol‐jet‐printed, electrolyte‐gated In 2 O 3 thin film transistors (TFTs) at electron densities of 10 14 cm −2 and mobility of 10 cm 2 V −1 s −1 , demonstrating the potential for fundamental transport physics as well as maximizing ON current in solution‐processed TFTs.