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Strain‐Modulated Charge Transport in Flexible PbS Nanocrystal Field‐Effect Transistors
Author(s) -
Nugraha Mohamad Insan,
Matsui Hiroyuki,
Watanabe Shun,
Kubo Takayoshi,
Häusermann Roger,
Bisri Satria Zulkarnaen,
Sytnyk Mykhailo,
Heiss Wolfgang,
Loi Maria Antonietta,
Takeya Jun
Publication year - 2017
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201600360
Subject(s) - nanocrystal , materials science , strain (injury) , transistor , nanotechnology , charge (physics) , hexagonal crystal system , optoelectronics , voltage , electrical engineering , crystallography , physics , engineering , chemistry , medicine , quantum mechanics
Mechanical strain effect on lead sulfide (PbS) nanocrystal transistors is demonstrated. By applying compressive strain, the electron mobility is increased up to 45% while the mobility decreases in the opposite strain direction. The results are followed by the change of threshold voltages which originates from the bending of the ligands and the change of carrier traps when the strain is applied.