Engineering the Growth of MoS 2  via Atomic Layer Deposition of Molybdenum Oxide Film Precursor | Zendy

Martella Christian | Zendy; Melloni Pierpaolo | Zendy; Cinquanta Eugenio | Zendy; Cianci Elena | Zendy; Alia Mario | Zendy; Longo Massimo | Zendy; Lamperti Alessio | Zendy; Vangelista Silvia | Zendy; Fanciulli Marco | Zendy; Molle Alessandro | Zendy

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Engineering the Growth of MoS 2 via Atomic Layer Deposition of Molybdenum Oxide Film Precursor

Author(s) -

Martella Christian,

Melloni Pierpaolo,

Cinquanta Eugenio,

Cianci Elena,

Alia Mario,

Longo Massimo,

Lamperti Alessio,

Vangelista Silvia,

Fanciulli Marco,

Molle Alessandro

Publication year - 2016

Publication title -

advanced electronic materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.25

H-Index - 56

ISSN - 2199-160X

DOI - 10.1002/aelm.201600330

Subject(s) - materials science , molybdenum , atomic layer deposition , layer (electronics) , stoichiometry , oxide , deposition (geology) , sapphire , thin film , molybdenum oxide , chemical engineering , nanotechnology , molybdenum disulfide , inorganic chemistry , metallurgy , organic chemistry , chemistry , optics , paleontology , engineering , sediment , biology , laser , physics

The growth of atomically thin MoS 2 films is achieved by sulfurization of molybdenum oxide precursor films grown by atomic layer deposition. The quality features of the MoS 2 films are engineered controlling the stoichiometry, morphology, and thickness of the precursors. The interface interaction between the precursor films and the substrates (SiO 2 or sapphire) plays a key role in the MoS 2 formation.

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