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Engineering the Growth of MoS 2 via Atomic Layer Deposition of Molybdenum Oxide Film Precursor
Author(s) -
Martella Christian,
Melloni Pierpaolo,
Cinquanta Eugenio,
Cianci Elena,
Alia Mario,
Longo Massimo,
Lamperti Alessio,
Vangelista Silvia,
Fanciulli Marco,
Molle Alessandro
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201600330
Subject(s) - materials science , molybdenum , atomic layer deposition , layer (electronics) , stoichiometry , oxide , deposition (geology) , sapphire , thin film , molybdenum oxide , chemical engineering , nanotechnology , molybdenum disulfide , inorganic chemistry , metallurgy , organic chemistry , chemistry , optics , paleontology , engineering , sediment , biology , laser , physics
The growth of atomically thin MoS 2 films is achieved by sulfurization of molybdenum oxide precursor films grown by atomic layer deposition. The quality features of the MoS 2 films are engineered controlling the stoichiometry, morphology, and thickness of the precursors. The interface interaction between the precursor films and the substrates (SiO 2 or sapphire) plays a key role in the MoS 2 formation.