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Tunable Electronic Structures in Wrinkled 2D Transition‐Metal‐Trichalcogenide (TMT) HfTe 3 Films
Author(s) -
Wang YuQi,
Wu Xu,
Ge YanFeng,
Wang YeLiang,
Guo Haiming,
Shao Yan,
Lei Tao,
Liu Chen,
Wang JiaOu,
Zhu ShiYu,
Liu ZhongLiu,
Guo Wei,
Ibrahim Kurash,
Yao YuGui,
Gao HongJun
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201600324
Subject(s) - materials science , transition metal , nanotechnology , electronic structure , condensed matter physics , crystallography , engineering physics , chemical physics , optoelectronics , organic chemistry , engineering , chemistry , physics , catalysis
2D materials with anisotropic symmetry are likely, in general, to possess strain that is artificially adjustable in a single direction, inspiring strategies of artificial regulation of local structures and related properties. Herein, strain‐induced wrinkles in an anisotropic 2D transition‐metal‐trichalcogenide HfTe 3 film are fabricated and illustrated for the first time. The corresponding localized electronic structures in the 1D corrugated wrinkles are revealed by a combination of experiment and simulation. The wrinkled HfTe 3 film probably features electrical transport properties never before seen and useful for developing wrinkle‐based heterojunctions for novel nanoelectronic devices.