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Magnetic and Magnetodielectric Properties of Epitaxial Iron Vanadate Thin Films
Author(s) -
Zhou Dongyi,
Takahashi Ryota,
Zhou Yanyu,
Kim Dohyung,
Suresh Vandrangi Kumar,
Chu YingHao,
He Qing,
Munroe Paul,
Lippmaa Mikk,
Seidel Jan,
Valanoor Nagarajan
Publication year - 2017
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201600295
Subject(s) - materials science , condensed matter physics , dielectric , ferromagnetism , epitaxy , magnetic circular dichroism , thin film , hysteresis , pulsed laser deposition , analytical chemistry (journal) , crystallography , optoelectronics , spectral line , nanotechnology , chemistry , physics , layer (electronics) , chromatography , astronomy
The magnetic and magnetodielectric behavior of epitaxial (001) transition metal oxide spinel iron vanadate (Fe 1+ x V 2− x O 4 , FVO) thin films grown on (001) SrTiO 3 substrates by pulsed laser deposition is reported. X‐ray absorption spectroscopy studies confirm the trivalent and nominally divalent nature of V and Fe ions, respectively, while an excess of Fe 3+ ions is also found. Aberration‐corrected cross‐sectional scanning transmission electron microscopy analysis suggests that the excess Fe 3+ may be accommodated through Fe 3 O 4 stacking faults along the {111} planes. Temperature‐dependent X‐ray magnetic circular dichroism spectra reveal an anti‐parallel alignment of spins between the Fe 2+ and V 3+ cations. M – H loops acquired at 10 K, well below the noncollinear ferromagnetic phase transition temperature, show magnetic anisotropy and point to the existence of two distinct phases with different coercive fields. Visual evidence for magnetic domains and their switching is given by magnetic force microscopy, which finds a switching field of ≈3 T in agreement with the M – H loops. Magnetodielectric measurements for a Pd/FVO/Nb:STO heterostructure reveal a weak hysteresis in the magneto‐capacitance loops at 10 K, thus confirming magneto‐dielectric coupling. Detailed temperature and frequency‐dependent dielectric studies find that Maxwell‐Wagner‐type relaxation dominates capacitance behavior above ≈40 K due to a FVO/Nb:SrTiO 3 Schottky interface.