Premium
Epitaxy of Ultrathin SnSe Single Crystals on Polydimethylsiloxane: In‐Plane Electrical Anisotropy and Gate‐Tunable Thermopower
Author(s) -
Pei Tengfei,
Bao Lihong,
Ma Ruisong,
Song Shiru,
Ge Binghui,
Wu Liangmei,
Zhou Zhang,
Wang Guocai,
Yang Haifang,
Li Junjie,
Gu Changzhi,
Shen Chengmin,
Du Shixuan,
Gao HongJun
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201600292
Subject(s) - polydimethylsiloxane , materials science , anisotropy , chemical vapor deposition , raman spectroscopy , seebeck coefficient , epitaxy , field (mathematics) , nanotechnology , optoelectronics , optics , composite material , physics , thermal conductivity , mathematics , layer (electronics) , pure mathematics
Ultrathin SnSe nanosheets (9–20 nm) are synthesized on molten polydimethylsiloxane by chemical vapor deposition. Thickness‐dependent Raman features persist even with thickness over 10 nm. Meanwhile, anisotropy of field‐effect mobility along b and c axes is observed above 240 K. Finally, thermopower can be easily modified by gate bias and temperature.