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Dual‐Characteristic Transistors Based on Semiconducting Polymer Blends
Author(s) -
Lu Guanghao,
Pietro Riccardo Di,
Kölln Lisa Sophie,
Nasrallah Iyad,
Zhou Ling,
Mollinger Sonya,
Himmelberger Scott,
Koch Norbert,
Salleo Alberto,
Neher Dieter
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201600267
Subject(s) - subthreshold conduction , transistor , dual (grammatical number) , materials science , voltage , inverter , optoelectronics , polymer , low voltage , threshold voltage , electrical engineering , computer science , engineering , art , literature , composite material
A dual‐characteristic polymer field‐effect transistor has markedly different characteristics in low and high voltage operations. In the low‐voltage range (<5 V) it shows sharp subthreshold slopes (0.3–0.4 V dec −1 ), using which a low‐voltage inverter with gain 8 is realized, while high‐voltage (>5 V) induces symmetric current with regard to drain and gate voltages, leading to discrete differential (trans) conductances.