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Enhanced Ferroelectric Property of P(VDF‐TrFE‐CTFE) Film Using Room‐Temperature Crystallization for High‐Performance Ferroelectric Device Applications
Author(s) -
Cho Yuljae,
Ahn Docheon,
Park Jong Bae,
Pak Sangyeon,
Lee Sanghyo,
Jun Byoung Ok,
Hong John,
Lee Su Yong,
Jang Jae Eun,
Hong Jinpyo,
Morris Stephen M.,
Sohn Jung Inn,
Cha Seung Nam,
Kim Jong Min
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201600225
Subject(s) - ferroelectricity , materials science , annealing (glass) , crystallization , non volatile memory , optoelectronics , nanotechnology , chemical engineering , dielectric , composite material , engineering
The ferroelectric β‐phase in a poly(vinylidenefluoride‐trifluoroethylene‐chlorotrifluoroethylene) film is successfully formed using a room temperature solvent‐annealing process and shows enhanced ferroelectricity compared to a thermally annealed film. Applications in electronics and energy are demonstrated with significantly enhanced device performances for a solvent annealing (SA) film employed devices compared to a thermal annealing film employed due to enhanced ferroelectricity of the SA film.