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High Performance Graphene–Oxide–Metal Diode through Bias‐Induced Barrier Height Modulation
Author(s) -
Urcuyo Roberto,
Duong Dinh Loc,
Jeong Hye Yun,
Burghard Marko,
Kern Klaus
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201600223
Subject(s) - graphene , oxide , diode , materials science , optoelectronics , modulation (music) , nanotechnology , metal , physics , metallurgy , acoustics
Graphene–oxide–metal diodes are presented whose performance is preserved even for thin oxide layers, as required for high frequency applications. The diodes, which rely upon bias‐induced modulation of graphene's work function, thus overcome a major, longstanding issue of metal–insulator–metal diodes.