Highly Conducting In 2 O 3  Nanowire Network with Passivating ZrO 2  Thin Film for Solution‐Processed Field Effect Transistors | Zendy

Park Hyungjin | Zendy; Yoon Ki Ro | Zendy; Kim Sung Kyu | Zendy; Kim IlDoo | Zendy; Jin Jungho | Zendy; Kim Yun Hyeok | Zendy; Bae ByeongSoo | Zendy

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Highly Conducting In 2 O 3 Nanowire Network with Passivating ZrO 2 Thin Film for Solution‐Processed Field Effect Transistors

Author(s) -

Park Hyungjin,

Yoon Ki Ro,

Kim Sung Kyu,

Kim IlDoo,

Jin Jungho,

Kim Yun Hyeok,

Bae ByeongSoo

Publication year - 2016

Publication title -

advanced electronic materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.25

H-Index - 56

ISSN - 2199-160X

DOI - 10.1002/aelm.201600218

Subject(s) - materials science , nanowire , thin film , nanotechnology , transistor , thin film transistor , field (mathematics) , dipole , field effect transistor , optoelectronics , engineering physics , layer (electronics) , electrical engineering , physics , voltage , mathematics , quantum mechanics , pure mathematics , engineering

A hybrid In 2 O 3 nanowire/ZrO 2 thin film field effect transistor is demonstrated and the role of insulating ZrO 2 thin film is investigated. The ZrO 2 film effectively passivates oxygen vacancies at the surface of the conducting In 2 O 3 nanowire network and produces interfacial dipoles, leading to a lower energy barrier for current conduction.

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