Premium
Highly Conducting In 2 O 3 Nanowire Network with Passivating ZrO 2 Thin Film for Solution‐Processed Field Effect Transistors
Author(s) -
Park Hyungjin,
Yoon Ki Ro,
Kim Sung Kyu,
Kim IlDoo,
Jin Jungho,
Kim Yun Hyeok,
Bae ByeongSoo
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201600218
Subject(s) - materials science , nanowire , thin film , nanotechnology , transistor , thin film transistor , field (mathematics) , dipole , field effect transistor , optoelectronics , engineering physics , layer (electronics) , electrical engineering , physics , voltage , mathematics , quantum mechanics , pure mathematics , engineering
A hybrid In 2 O 3 nanowire/ZrO 2 thin film field effect transistor is demonstrated and the role of insulating ZrO 2 thin film is investigated. The ZrO 2 film effectively passivates oxygen vacancies at the surface of the conducting In 2 O 3 nanowire network and produces interfacial dipoles, leading to a lower energy barrier for current conduction.