Premium
Performance Upper Limit of sub‐10 nm Monolayer MoS 2 Transistors
Author(s) -
Ni Zeyuan,
Ye Meng,
Ma Jianhua,
Wang Yangyang,
Quhe Ruge,
Zheng Jiaxin,
Dai Lun,
Yu Dapeng,
Shi Junjie,
Yang Jinbo,
Watanabe Satoshi,
Lu Jing
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201600191
Subject(s) - molybdenum disulfide , materials science , monolayer , transistor , optoelectronics , subthreshold swing , field effect transistor , semiconductor , ballistic limit , silicon , limit (mathematics) , ballistic conduction , nanotechnology , electrical engineering , voltage , electron , physics , metallurgy , mathematical analysis , mathematics , engineering , projectile , quantum mechanics
Field‐effect transistors (FETs) fabricated with monolayer (ML) molybdenum disulfide (MoS 2 ) have shown promising potential as a candidate of next‐generation nanoelectronic devices. The first first‐principles quantum transport investigation of the ballistic performance upper limit of sub‐10 nm ML MoS 2 FETs with Ti electrode is provided. An extraordinary small subthreshold swing is obtained by taking advantage of a dual gate (DG) configuration. The ballistic performance upper limits of the sub‐10 nm ML MoS 2 DGFETs are comparable with the best existing sub‐10 nm advanced silicon FETs. The 10 nm ML MoS 2 DGFET can satisfy 35% and 54% requirement of the on‐state current of high performance and low power FETs of the next decade in the International Technology Roadmap for Semiconductors 2013, respectively.