Magnetoresistance Amplification Effect in Silicon Transistor Device | Zendy

Wang Tao | Zendy; Yang Dezheng | Zendy; Si Mingsu | Zendy; Wang Fangcong | Zendy; Zhou Shiming | Zendy; Xue Desheng | Zendy

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Magnetoresistance Amplification Effect in Silicon Transistor Device

Author(s) -

Wang Tao,

Yang Dezheng,

Si Mingsu,

Wang Fangcong,

Zhou Shiming,

Xue Desheng

Publication year - 2016

Publication title -

advanced electronic materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.25

H-Index - 56

ISSN - 2199-160X

DOI - 10.1002/aelm.201600174

Subject(s) - magnetoresistance , materials science , transistor , magnetic field , field effect transistor , current (fluid) , condensed matter physics , silicon , semiconductor , optoelectronics , semiconductor device , electrical engineering , nanotechnology , physics , layer (electronics) , voltage , engineering , quantum mechanics

Large magnetoresistance discovered in nonmagnetic semiconductors offers an alternative route to renew magnetoelectronics without ferromagnets. However, it is still a great challenge to retain such large magnetoresistance under low magnetic fields. In this work, analogous to current amplification in the transistor, a magnetoresistance amplification effect is proposed in silicon transistor device, where the device current is significantly controlled by magnetic‐field‐manipulated coupling of two p – n junctions in transistor. As a direct consequence, large magnetoresistance of 50 000% with high sensitivity of 50% Oe ‐1 is yielded at magnetic field of only 0.1 T. The results not only provide here a new proposal compatible with current semiconductor technology to achieve large magntoresistance at low magnetic field, but also realize magnetic‐field‐manipulated transistor, which is a step for magnetoelectronics.

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