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Phenylquinoline Derivatives as Efficient Interfacial Layer Materials for High‐Performance Organic Electronic Devices
Author(s) -
Gunasekar Kumarasamy,
Cho Woosum,
Long Dang Xuan,
Reddy Saripally Sudhaker,
Song Myungkwan,
Noh YongYoung,
Jin SungHo
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201600086
Subject(s) - materials science , work function , electron mobility , thin film transistor , ultraviolet photoelectron spectroscopy , homo/lumo , organic solar cell , electrode , amorphous solid , organic electronics , organic semiconductor , active layer , optoelectronics , x ray photoelectron spectroscopy , layer (electronics) , chemical engineering , transistor , nanotechnology , organic chemistry , polymer , chemistry , molecule , physics , voltage , quantum mechanics , engineering , composite material
Thin film electronic and optoelectronic devices demand electrodes with a work function ( Φ ) that is sufficiently low to facilitate the transport of electrons in and out of the lowest unoccupied molecular orbital of a given semiconductor. Herein, phenothiazine‐, carbazole‐, and fluorene‐based phenylquinoline derivatives as efficient interfacial layer (IL) materials for solution‐processable organic and metal oxide electronic devices are reported. The IL is applied on top of a charge injection electrode in various solution‐processed devices, including n‐channel organic thin‐film transistors (OTFTs) with [6,6]‐phenyl C 71 ‐butyric acid methyl ester (PC 71 BM) and poly[N,N′‐ bis (2‐octyldodecyl)‐naphthalene‐1,4:5,8‐ bis (dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene) [P(NDI2OD‐T2)] and amorphous indium gallium zinc oxide (IGZO) transistors, and also in organic photovoltaics (OPVs). Both PC 71 BM‐ and P(NDI2OD‐T2)‐based n‐channel OTFTs with IL show enhanced mobility by more than 200% compared to bare Au electrode. IGZO transistors showed much improved mobility of 15.3 cm 2 V −1 s −1 with an IL compared to bare Au (0.6 cm 2 V −1 s −1 ) device. A significantly improved power conversion efficiency (PCE) of 7.63% is obtained for IL utilizing the poly[4,8‐ bis [(2‐ethylhexyl)oxy]benzo[1,2‐b:4,5‐b′]dithiophene‐2,6‐diyl][3‐fluoro‐2‐[(2‐ethylhexyl)carbonyl]thieno[3,4‐b]‐thiophenediyl] (PTB7):PC 71 BM based OPVs compared to 4.75% of control device. Ultraviolet photoelectron spectroscopy study reveals that phenylquinoline derivatives significantly lower the Φ of Au, thus facilitating electron injection/extraction in the device.