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Electrical Switching of Magnetization in the Artificial Multiferroic CoFeB/BaTiO 3
Author(s) -
Baldrati Lorenzo,
Rinaldi Christian,
Manuzzi Alberto,
Asa Marco,
Aballe Lucia,
Foerster Michael,
Biškup Neven,
Varela Maria,
Cantoni Matteo,
Bertacco Riccardo
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201600085
Subject(s) - materials science , magnetization , ferroelectricity , condensed matter physics , multiferroics , coercivity , spintronics , ferromagnetism , magnetic anisotropy , optoelectronics , magnetic field , dielectric , physics , quantum mechanics
Electronic, magnetic, chemical, and mechanical phenomena occurring in metal/oxide heterostructures have recently received great attention in view of their exploitation in novel solid state devices. In particular, artificial multiferroics, i.e., layered or composite systems made of a ferromagnetic and ferroelectric phase, hold potential for achieving the electric control of the magnetization in spintronic devices. In this paper, a novel artificial multiferroic displaying perpendicular magnetic anisotropy is reported: the CoFeB/BaTiO 3 bilayer. At room temperature, the CoFeB magnetic coercive field displays a hysteretic behavior, as a function of the voltage across the BaTiO 3 layer, with a 60% variation for complete reversal of the ferroelectric BaTiO 3 polarization. This is exploited to achieve the electric switching of the magnetization of individual CoFeB electrodes under a uniform magnetic bias field. Upon the local BaTiO 3 polarization reversal, the CoFeB electrode jumps from an initial metastable state into the opposite stable magnetization state, with a characteristic switching time determined by magnetic viscosity. The magnetically assisted bipolar electric switching of the magnetization is demonstrated, via voltage pulses compatible with complementary metal‐oxide semiconductor (CMOS) electronics, under uniform bias fields as low as 10 Oe.