Premium
Edge‐States‐Induced Disruption to the Energy Band Alignment at Thickness‐Modulated Molybdenum Sulfide Junctions
Author(s) -
Guo Yao,
Yin Jianbo,
Wei Xianlong,
Tan Zhenjun,
Shu Jiapei,
Liu Bo,
Zeng Yi,
Gao Song,
Peng Hailin,
Liu Zhongfan,
Chen Qing
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201600048
Subject(s) - heterojunction , monolayer , photocurrent , materials science , optoelectronics , schottky diode , enhanced data rates for gsm evolution , schottky barrier , nanotechnology , computer science , engineering physics , telecommunications , physics , diode
Using scanning photo current/voltage measurements , it is proven that the ideal electron affinity model, which is often used to understand the band alignment of heterojunctions, fails when used for multilayer‐monolayer MoS 2 heterojunctions. The impact of edge states should be considered, resulting in the “back‐to‐back” Schottky barriers and an overall photocurrent at the multilayer‐monolayer MoS 2 heterojunction.