Edge‐States‐Induced Disruption to the Energy Band Alignment at Thickness‐Modulated Molybdenum Sulfide Junctions | Zendy

Guo Yao | Zendy; Yin Jianbo | Zendy; Wei Xianlong | Zendy; Tan Zhenjun | Zendy; Shu Jiapei | Zendy; Liu Bo | Zendy; Zeng Yi | Zendy; Gao Song | Zendy; Peng Hailin | Zendy; Liu Zhongfan | Zendy; Chen Qing | Zendy

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Edge‐States‐Induced Disruption to the Energy Band Alignment at Thickness‐Modulated Molybdenum Sulfide Junctions

Author(s) -

Guo Yao,

Yin Jianbo,

Wei Xianlong,

Tan Zhenjun,

Shu Jiapei,

Liu Bo,

Zeng Yi,

Gao Song,

Peng Hailin,

Liu Zhongfan,

Chen Qing

Publication year - 2016

Publication title -

advanced electronic materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.25

H-Index - 56

ISSN - 2199-160X

DOI - 10.1002/aelm.201600048

Subject(s) - heterojunction , monolayer , photocurrent , materials science , optoelectronics , schottky diode , enhanced data rates for gsm evolution , schottky barrier , nanotechnology , computer science , engineering physics , telecommunications , physics , diode

Using scanning photo current/voltage measurements , it is proven that the ideal electron affinity model, which is often used to understand the band alignment of heterojunctions, fails when used for multilayer‐monolayer MoS 2 heterojunctions. The impact of edge states should be considered, resulting in the “back‐to‐back” Schottky barriers and an overall photocurrent at the multilayer‐monolayer MoS 2 heterojunction.

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