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Optoelectronic Switches: An Optoelectronic Switch Based on Intrinsic Dual Schottky Diodes in Ambipolar MoSe 2 Field‐Effect Transistors (Adv. Electron. Mater. 11/2015)
Author(s) -
Pradhan Nihar R.,
Lu Zhengguang,
Rhodes Daniel,
Smirnov Dmitry,
Manousakis Efstratios,
Balicas Luis
Publication year - 2015
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201570041
Subject(s) - ambipolar diffusion , optoelectronics , materials science , schottky diode , schottky barrier , rectification , diode , transistor , field effect transistor , semiconductor , electron , voltage , electrical engineering , physics , quantum mechanics , engineering
In article number 1500215, Nihar R. Pradhan, Luis Balicas, and co‐workers demonstrate that the Schottky barriers between metallic interconnects and a van der Waals coupled semiconductor can lead to a light‐induced, diode‐like response with a sense of current rectification that can be controlled via a back gate voltage. This effect corresponds to a novel type of optoelectronic switch, with potential for technological applications. The image depicts the underlying process, including electron‐hole pair generation, the modulation of the Schottky barrier, and control of the electrical current.