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Silicon Nanowires: Low Temperature Processing to Form Oxidation Insensitive Electrical Contact at Silicon Nanowire/Nanowire Junctions (Adv. Electron. Mater. 10/2015)
Author(s) -
Ter Céline,
Serre Pauline,
Lebrun JeanMarie,
Brouzet Virginie,
Legallais Maxime,
David Sylvain,
Luciani Thierry,
Pascal Céline,
Baron Thierry,
Missiaen JeanMichel
Publication year - 2015
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201570037
Subject(s) - nanowire , materials science , oxidizing agent , silicon nanowires , optoelectronics , silicon , nanotechnology , chemistry , organic chemistry
A nanonet is a nanostructured network composed of randomly oriented nanowires. Si nanonets, allowing electrical conduction even under an oxidizing atmosphere, are successfully fabricated by Céline Ternon and co‐workers. In article number 1500172, it is demonstrated that stable Si nanowire–nanowire junctions, insensitive to oxidation, can be formed by low temperature processing.