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Field‐Effect Transistors: Selecting Semiconducting Single‐Walled Carbon Nanotubes with Narrow Bandgap Naphthalene Diimide‐Based Polymers (Adv. Electron. Mater. 8/2015)
Author(s) -
SalazarRios Jorge Mario,
Gomulya Widianta,
Derenskyi Vladimir,
Yang Jie,
Bisri Satria Zulkarnaen,
Chen Zhihua,
Facchetti Antonio,
Loi Maria Antonietta
Publication year - 2015
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201570027
Subject(s) - materials science , carbon nanotube , transistor , optoelectronics , diimide , polymer , electrode , nanotechnology , field effect transistor , band gap , conjugated system , tube (container) , naphthalene , voltage , composite material , electrical engineering , organic chemistry , molecule , chemistry , perylene , engineering
In article number 1500074, Maria Antonietta Loi and co‐workers describe a transistor structure where a network of semiconducting single‐walled carbon nanotubes connects the source and drain gold electrodes and a naphthalene diimide‐based conjugated polymer (PE‐N‐73) is wrapped around the tubes to keep them individualized. The sparks allocated in the junctions between the tubes in the inside cover image portray the charge hopping from one tube to the other, which is not diminished by the presence of PE‐N‐73.