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Hole Trapping: Hole‐Trapping Effect of the Aliphatic‐Amine Based Electron Injection Materials in the Operation of OLEDs to Facilitate the Electron Injection (Adv. Electron. Mater. 3/2015)
Author(s) -
Zhong Zhiming,
Hu Zhanhao,
Jiang Zhixiong,
Wang Jianbin,
Chen Yawen,
Song Chen,
Han Shaohu,
Huang Fei,
Peng Junbiao,
Wang Jian,
Cao Yong
Publication year - 2015
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201570006
Subject(s) - trapping , materials science , oled , electron , amine gas treating , optoelectronics , photochemistry , nanotechnology , organic chemistry , physics , chemistry , ecology , layer (electronics) , quantum mechanics , biology
During operation of organic light‐emitting diodes with an electron injection layer containing aliphatic amine groups, Jian Wang and co‐workers find in article number 1400014 that the amine groups trap a huge amount of holes, bend the energy level, and decrease the electron tunneling distance. The reduced electron tunneling distance along with the dipole layer induced by the electron injection layer facilitate electron injection.