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Double Gate PbS Quantum Dot Field‐Effect Transistors for Tuneable Electrical Characteristics
Author(s) -
Shulga Artem G.,
Piveteau Laura,
Bisri Satria Z.,
Kovalenko Maksym V.,
Loi Maria A.
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201500467
Subject(s) - materials science , gating , transistor , gate dielectric , hysteresis , optoelectronics , quantum dot , field effect transistor , threshold voltage , delocalized electron , dielectric , voltage , nanotechnology , condensed matter physics , electrical engineering , physics , physiology , quantum mechanics , engineering , biology
In this work colloidal quantum dots double gate transistors are introduced. A high‐ k ( k = 43) relaxor ferroelectric polymer is used as a dielectric material for the top gate in a device where the other gate is fabricated from SiO 2 . The device in double gate configuration is characterized by reduced hysteresis in the transfer curves measured by separately sweeping the voltage of the SiO 2 and of the polymer gate. Gating with the relaxor polymer leads to mobility values of μ e = 1.1 cm 2 V −1 s −1 and μ h = 6 × 10 −3 cm 2 V −1 s −1 that exceed those extracted from the SiO 2 gating: μ e = 0.5 cm 2 V −1 s −1 and μ h = 2 × 10 −3 cm 2 V −1 s −1 . Measurements under double gating conditions prove that the device works in a single channel mode that is delocalized over the whole film thickness. Double gating allows for shifting the threshold voltage into a desired position and also allows increasing the on‐current of the devices.