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Electronic Properties of Complex Self‐Assembled InAs Nanowire Networks
Author(s) -
Heedt Sebastian,
Vakulov Daniil,
Rieger Torsten,
Rosenbach Daniel,
Trellenkamp Stefan,
Grützmacher Detlev,
Lepsa Mihail Ion,
Schäpers Thomas
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201500460
Subject(s) - nanowire , materials science , transistor , epitaxy , nanotechnology , field (mathematics) , field effect transistor , optoelectronics , electrical engineering , engineering , mathematics , layer (electronics) , voltage , pure mathematics
Electrical transport in epitaxially merged InAs nanowire junctions and nanowire networks is investigated. Single‐crystalline zinc blende regions form at the L‐ and T‐shaped nanowire links. The impact of the junction regions on electrical transport is examined at room temperature and at cryogenic temperatures. The cross configuration is utilized to compare transport properties extracted from the Hall effect and field‐effect transistor characterizations.