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Deformation Effect on the Electrical Properties of a Flexible Organic Semiconductor composed of Poly(dimethylsiloxane) and Multiwalled Carbon Nanotubes
Author(s) -
Zhou Yi,
Zhang Ding,
Liu Changhong,
Fan Shoushan
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201500421
Subject(s) - materials science , percolation threshold , composite material , composite number , deformation (meteorology) , heterojunction , semiconductor , carbon nanotube , bending , graphene , gauge factor , flexible display , nanotechnology , electrical resistivity and conductivity , optoelectronics , fabrication , thin film transistor , engineering , medicine , alternative medicine , pathology , layer (electronics) , electrical engineering
Organic semiconductors are the main elements for the development of flexible electronics due to their excellent flexibility and large‐area manufacturing at low cost. Here, the effect of deformation on the electrical properties of a highly flexible organic semiconductor composed of poly(dimethylsiloxane) and multiwalled carbon nanotubes is investigated. The results reveal that their resistances increase with increasing deformation quantities, and in contrast to the outcomes of the compressed samples, the resistances of the higher multiwalled carbon nanotube loading composites show greater changes than those of the lower ones under certain bending angles or stretching ratios. Moreover, the property of the 0.35 wt% (the percolation threshold of the composite) sample is highly stable even when the sample is subjected to extreme bending or stretching deformations. Two different transition mechanisms are proposed to explain these phenomena, and quantitative analyses of the Schottky barrier heights in copper/composite junctions in each case are used to support the proposition. Inspired by the pressure‐induced sensitivity of the low‐loading composite, a P‐P heterojunction diode using 0.35 wt% composite with asymmetric pressured sides is fabricated and measured. This work may have profound guiding significance for composite applications in flexible electronics.