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Gate‐Free Controlled Multibit Memories Based on Individual ZnO:In Micro/Nanowire Back‐to‐Back Diodes
Author(s) -
Zhao Jie,
Cheng Baochang,
Xiao Yanhe,
Guo Rui,
Lei Shuijin
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201500395
Subject(s) - materials science , optoelectronics , schottky diode , nanowire , diode , schottky barrier , voltage , non volatile memory , nanotechnology , electrical engineering , engineering
Most actively tunable Schottky diodes have a tendency to set up gate voltages or complex configurations. In this work, gate‐free two‐terminal devices based on individual ZnO:In micro/nanowire back‐to‐back diodes are fabricated for nonvolatile bias sensors and multibit memories, which can be controllably set by drain‐source bias voltage ( V DS ) after annealing at 150 °C. The nonvolatile sensor and multibit memory effect dominantly originates from the controllable modulation of trap‐related Schottky barrier height by the synergistic action of thermal excitation and electric field injection of electrons. The tubable electrical properties of individual ZnO:In micro/nanowire‐based two‐terminal devices, regulated by temperature and V DS , point a way to develop a new type of nonvolatile bias sensors and multibit resistance random access memories with superior repeatability and stability.