Integrated Flexible and High‐Quality Thin Film Transistors Based on Monolayer MoS 2 | Zendy

Zhao Jing | Zendy; Chen Wei | Zendy; Meng Jianling | Zendy; Yu Hua | Zendy; Liao Mengzhou | Zendy; Zhu Jianqi | Zendy; Yang Rong | Zendy; Shi Dongxia | Zendy; Zhang Guangyu | Zendy

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Integrated Flexible and High‐Quality Thin Film Transistors Based on Monolayer MoS 2

Author(s) -

Zhao Jing,

Chen Wei,

Meng Jianling,

Yu Hua,

Liao Mengzhou,

Zhu Jianqi,

Yang Rong,

Shi Dongxia,

Zhang Guangyu

Publication year - 2016

Publication title -

advanced electronic materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.25

H-Index - 56

ISSN - 2199-160X

DOI - 10.1002/aelm.201500379

Subject(s) - monolayer , materials science , flexibility (engineering) , transistor , thin film transistor , optoelectronics , field effect transistor , nanotechnology , quality (philosophy) , electron mobility , layer (electronics) , electrical engineering , physics , engineering , statistics , mathematics , voltage , quantum mechanics

Integrated thin film transistors based on CVD‐grown high‐quality monolayer MoS 2 are reported. Every device has the stable and uniformity mobility ˜13.9 ± 2 cm 2 v ‐1 s ‐1 and an on/off ratio higher than 10 5 . These MoS 2 field effect transistors exhibit remarkably high mechanical flexibility with no obvious change of the electrical characteristics upon strain ˜1%.

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