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Integrated Flexible and High‐Quality Thin Film Transistors Based on Monolayer MoS 2
Author(s) -
Zhao Jing,
Chen Wei,
Meng Jianling,
Yu Hua,
Liao Mengzhou,
Zhu Jianqi,
Yang Rong,
Shi Dongxia,
Zhang Guangyu
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201500379
Subject(s) - monolayer , materials science , flexibility (engineering) , transistor , thin film transistor , optoelectronics , field effect transistor , nanotechnology , quality (philosophy) , electron mobility , layer (electronics) , electrical engineering , physics , engineering , statistics , mathematics , voltage , quantum mechanics
Integrated thin film transistors based on CVD‐grown high‐quality monolayer MoS 2 are reported. Every device has the stable and uniformity mobility ˜13.9 ± 2 cm 2 v ‐1 s ‐1 and an on/off ratio higher than 10 5 . These MoS 2 field effect transistors exhibit remarkably high mechanical flexibility with no obvious change of the electrical characteristics upon strain ˜1%.