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An Energy‐Efficient, BiFeO 3 ‐Coated Capacitive Switch with Integrated Memory and Demodulation Functions
Author(s) -
You Tiangui,
Selvaraj Laveen Prabhu,
Zeng Huizhong,
Luo Wenbo,
Du Nan,
Bürger Danilo,
Skorupa Ilona,
Prucnal Slawomir,
Lawerenz Alexander,
Mikolajick Thomas,
Schmidt Oliver G.,
Schmidt Heidemarie
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201500352
Subject(s) - materials science , optoelectronics , capacitive sensing , photodetector , semiconductor , wavelength , laser , quantum tunnelling , optics , electrical engineering , physics , engineering
A capacitive switching behavior is observed in a Si 3 N 4 /p‐Si‐based metal–insulator–semiconductor (MIS) structure due to the electron tunneling at the Si 3 N 4 /p‐Si interface. A BiFeO 3 (BFO) layer is deposited on Si 3 N 4 /p‐Si by pulsed laser deposition technique to obtain the memcapacitive effect as the distribution of positive charges in the Si 3 N 4 layer can be stabilized by the polarization charge of the ferroelectric BFO coating layer. The capacitive switching behavior of the Al/BFO/Si 3 N 4 /p‐Si/Au MIS structure is also sensitive to both intensity and wavelength of the illumination, which offers the possibility to create a photodetector for both intensity and color detection. Thus, the presented device has the potential application for future information storage and visible light communications. As an example, a photocapacitive demodulator with capability of decoding both wavelength and intensity information of the incident light is demonstrated.