Bias‐Stress‐Stable Low‐Voltage Organic Field‐Effect Transistors with Ultrathin Polymer Dielectric on C Nanoparticles | Zendy

Liu Jie | Zendy; Wang ChenHuan | Zendy; Liu ChangHai | Zendy; Li QinLiang | Zendy; Gao Xu | Zendy; Wang SuiDong | Zendy

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Bias‐Stress‐Stable Low‐Voltage Organic Field‐Effect Transistors with Ultrathin Polymer Dielectric on C Nanoparticles

Author(s) -

Liu Jie,

Wang ChenHuan,

Liu ChangHai,

Li QinLiang,

Gao Xu,

Wang SuiDong

Publication year - 2016

Publication title -

advanced electronic materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.25

H-Index - 56

ISSN - 2199-160X

DOI - 10.1002/aelm.201500349

Subject(s) - materials science , dielectric , transistor , nanoparticle , nanotechnology , optoelectronics , polymer , field effect transistor , threshold voltage , compatibility (geochemistry) , voltage , electrical engineering , composite material , engineering

Hybrid gate dielectrics , fabricated by depositing low‐ k polymers on sputtered C nanoparticles (NPs), show ultrathin, robust, and pinhole‐free features. The C NPs play a key role in the formation of good dielectrics. Based on the dielectrics, high‐performance low‐voltage organic field‐effect transistors (OFETs) with excellent bias stress stability and flexible compatibility are achieved. This is a general method for various low‐ k polymers and applicable to both p‐type and n‐type OFETs.

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