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Bias‐Stress‐Stable Low‐Voltage Organic Field‐Effect Transistors with Ultrathin Polymer Dielectric on C Nanoparticles
Author(s) -
Liu Jie,
Wang ChenHuan,
Liu ChangHai,
Li QinLiang,
Gao Xu,
Wang SuiDong
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201500349
Subject(s) - materials science , dielectric , transistor , nanoparticle , nanotechnology , optoelectronics , polymer , field effect transistor , threshold voltage , compatibility (geochemistry) , voltage , electrical engineering , composite material , engineering
Hybrid gate dielectrics , fabricated by depositing low‐ k polymers on sputtered C nanoparticles (NPs), show ultrathin, robust, and pinhole‐free features. The C NPs play a key role in the formation of good dielectrics. Based on the dielectrics, high‐performance low‐voltage organic field‐effect transistors (OFETs) with excellent bias stress stability and flexible compatibility are achieved. This is a general method for various low‐ k polymers and applicable to both p‐type and n‐type OFETs.