Coherent Epitaxy of a Ferroelectric Heterostructure on a Trilayered Buffer for Integration into Silicon | Zendy

Yamada Hiroyuki | Zendy; Toyosaki Yoshikiyo | Zendy; Sawa Akihito | Zendy

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Coherent Epitaxy of a Ferroelectric Heterostructure on a Trilayered Buffer for Integration into Silicon

Author(s) -

Yamada Hiroyuki,

Toyosaki Yoshikiyo,

Sawa Akihito

Publication year - 2016

Publication title -

advanced electronic materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.25

H-Index - 56

ISSN - 2199-160X

DOI - 10.1002/aelm.201500334

Subject(s) - ferroelectricity , epitaxy , materials science , heterojunction , buffer (optical fiber) , optoelectronics , crystallinity , interface (matter) , polarization (electrochemistry) , nanotechnology , computer science , composite material , telecommunications , dielectric , chemistry , layer (electronics) , capillary number , capillary action

Coherent‐epitaxial ferroelectric BaTiO 3 films are grown on Si by using a SrTiO 3 /SrO 1+δ /YSZ trilayered buffer. The SrTiO 3 /SrO 1+δ interface produces significant improvements in the BaTiO 3 /(La,Sr)MnO 3 heterostructure, including perfect (001) orientation, high crystallinity, and sharp and uniform interfaces. The BaTiO 3 ‐based metal/insulator (ferroelectric)/metal junctions exhibit a remanent polarization as high as 17 μC cm –2 . Nonvolatile electroresistance is also demonstrated in patterned junctions with ultrathin BaTiO 3 layers.

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