z-logo
Premium
1 GHz Pentacene Diode Rectifiers Enabled by Controlled Film Deposition on SAM‐Treated Au Anodes
Author(s) -
Kang Chanmo,
Wade Jessica,
Yun Sumin,
Lim Jaehoon,
Cho Hyunduck,
Roh Jeongkyun,
Lee Hyunkoo,
Nam Sangwook,
Bradley Donal D. C.,
Kim JiSeon,
Lee Changhee
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201500282
Subject(s) - pentacene , rectification , anode , diode , materials science , oled , optoelectronics , rectifier (neural networks) , deposition (geology) , electrical engineering , voltage , computer science , nanotechnology , thin film transistor , electrode , physics , engineering , stochastic neural network , recurrent neural network , layer (electronics) , quantum mechanics , machine learning , artificial neural network , biology , paleontology , sediment
Pentacene diodes with 2,3,4,5,6‐pentafluorobenzenethiol‐coated Au anodes show high current densities of 100 A cm −2 at 3 V with rectification ratios of 10 7 . Using such diodes in rectifier circuits allows an output voltage of 3.8 V to be achieved from a 10 V sinusoidal input at 1 GHz.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom