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Complementary Unipolar WS 2 Field‐Effect Transistors Using Fermi‐Level Depinning Layers
Author(s) -
Park Woojin,
Kim Yonghun,
Jung Ukjin,
Yang Jin Ho,
Cho Chunhum,
Kim Yun Ji,
Hasan Syed Mohammad Najib,
Kim Hyun Gu,
Lee Han Bo Ram,
Lee Byoung Hun
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201500278
Subject(s) - tungsten disulfide , materials science , contact resistance , layer (electronics) , transistor , field effect transistor , field (mathematics) , nanotechnology , optoelectronics , molybdenum disulfide , engineering physics , electrical engineering , physics , engineering , voltage , metallurgy , mathematics , pure mathematics
High contact resistance and symmetrical conduction are serious challenges in practical applications of transition metal dichalcogenide (TMD) field‐effect transistors (FETs). Unipolar behavior and reduced contact resistance are achieved for tungsten disulfide (WS 2 ) FETs by using a TiO 2 interfacial layer inserted between a metal layer and a WS 2 layer.