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Gate‐Tunable Ultrahigh Photoresponsivity of 2D Heterostructures Based on Few Layer MoS 2 and Solution‐Processed rGO
Author(s) -
Yang Juehan,
Huo Nengjie,
Li Yan,
Jiang XiangWei,
Li Tao,
Li Renxiong,
Lu Fangyuan,
Fan Chao,
Li Bo,
Nørgaard Kasper,
Laursen Bo W.,
Wei Zhongming,
Li Jingbo,
Li ShuShen
Publication year - 2015
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201500267
Subject(s) - heterojunction , materials science , graphene , ambipolar diffusion , optoelectronics , stacking , raman spectroscopy , oxide , field effect transistor , transistor , charge carrier , photoluminescence , nanotechnology , electron , voltage , optics , chemistry , physics , quantum mechanics , metallurgy , organic chemistry
2D materials heterostructures are built by vertical stacking of solution‐processed reduced graphene oxide (rGO) film and few‐layer MoS 2 . The Raman and photoluminescence of the MoS 2 /rGO heterostructures show more significant peak shift compared to individual MoS 2 or rGO film. The field‐effect transistors (FETs) based on such MoS 2 /rGO heterostructures show ambipolar behavior in the dark but n‐type behavior under illumination. This phenomenon provides a way to investigate the charge transport in valence band of MoS 2 . Due to charge separation caused by built‐in potential at MoS 2 /rGO interface, the recombination of photoexcited electron–hole pairs is effectively suppressed, leading to high photoresponsivity (≈2.4 × 10 4 A W −1 ) and photogain (≈4.7 × 10 4 ) of the MoS 2 /rGO heterostructures in ambient air with modulation of gate bias and drain–source bias.