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An Effective Approach for the Identification of Carrier Type and Local Inversion Doping in Graphene by Biased Atomic Force Microscopy
Author(s) -
Jia Yuping,
Guo Liwei,
Li Zhilin,
Huang Jiao,
Lu Wei,
Chen Hongxiang,
Chen Xiaolong
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201500255
Subject(s) - graphene , doping , materials science , nanoscopic scale , atomic force microscopy , inversion (geology) , nanotechnology , optoelectronics , paleontology , structural basin , biology
Electrically biased tapping mode (eb‐TM) in atomic force microscopy is demonstrated as an efficient and convenient method for determining carrier type in macroscale and local inversion doping in nanoscale of graphene. eb‐TM is a nondestructive, high spatial resolution, high sensitivity, and universal method to identify electrical inhomogeneity of any surface materials.