Premium
Self‐Aligned Single‐Crystalline Hexagonal Boron Nitride Arrays: Toward Higher Integrated Electronic Devices
Author(s) -
Tan Lifang,
Han Jiangli,
Mendes Rafael G.,
Rümmeli Mark H.,
Liu Jinxin,
Wu Qiong,
Leng Xuanye,
Zhang Tao,
Zeng Mengqi,
Fu Lei
Publication year - 2015
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201500223
Subject(s) - materials science , hexagonal boron nitride , dielectric , hexagonal crystal system , transistor , optoelectronics , domain (mathematical analysis) , field (mathematics) , nanotechnology , orientation (vector space) , field effect transistor , nitride , boron nitride , crystallography , layer (electronics) , electrical engineering , graphene , geometry , chemistry , engineering , mathematical analysis , mathematics , voltage , pure mathematics
A h‐BN self‐aligned single‐crystal array (SASCA) that exhibits orderly alignment and uniformly distribution is controllably synthesized on a liquid Cu surface for the first time. The h‐BN SASCA exhibits highly accordant spatial orientation and homogenous domain size, which can realize highly integrated and individually switching field‐effect transistors when serving as a gate dielectric. Circular h‐BN single‐crystals, which are considered to be the building blocks of h‐BN SASCA, are also observed.