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Anomalous Carrier Transport in Ambipolar Field‐Effect Transistor of Large Diameter Single‐Walled Carbon Nanotube Network
Author(s) -
Bisri Satria Zulkarnaen,
Derenskyi Vladimir,
Gomulya Widianta,
SalazarRios Jorge Mario,
Fritsch Martin,
Fröhlich Nils,
Jung Stefan,
Allard Sybille,
Scherf Ullrich,
Loi Maria Antonietta
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201500222
Subject(s) - ambipolar diffusion , materials science , carbon nanotube , transistor , nanotechnology , field (mathematics) , electron , field effect transistor , electrical engineering , physics , engineering , quantum mechanics , voltage , mathematics , pure mathematics
A demonstration of ambipolar transistors of polymer‐wrapped single‐walled carbon nanotubes (SWNTs) provides an opportunity to scrutinize transport mechanism of electrons and holes in this system. Anomalous temperature‐dependent nonlinear transport behavior is observed in large diameter SWNTs. This suggests an interplay between the intrinsic transport of individual tubes and the percolative network properties, highlighting the nature of polymer‐wrapped SWNTs as a complex hybrid material.