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Vapor‐Phase Deposited Ultrathin Polymer Gate Dielectrics for High‐Performance Organic Thin Film Transistors
Author(s) -
Seong Hyejeong,
Pak Kwanyong,
Joo Munkyu,
Choi Junhwan,
Im Sung Gap
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201500209
Subject(s) - materials science , polymer , acrylate , dielectric , chemical vapor deposition , thin film transistor , organic electronics , thin film , chemical engineering , optoelectronics , nanotechnology , transistor , copolymer , composite material , voltage , layer (electronics) , electrical engineering , engineering
A series of new ultrathin polymer dielectric layers (sub‐40 nm) is synthesized via initiated chemical vapor deposition (iCVD) for application in low‐power, flexible organic thin‐film transistors (OTFTs): poly(ethylene glycol dimethacrylate) (pEGDMA), poly(isobornyl acrylate) (pIBA), and poly(1 H , 1 H , 2 H , 2 H ‐perfluorodecyl acrylate) (pPFDA). The iCVD process is a solvent‐free, vapor‐phase process to deposit various kinds of functional polymer films with a high purity. The iCVD polymer dielectric layers commonly exhibit low leakage current densities ( J i ) less than 10 −8 A cm −2 in the range of ±3 MV cm −1 , high breakdown field ( E break ) over 4 MV cm −1 , and excellent flexibility up to a tensile strain of 3.3%. Hysteresis‐free, low‐voltage OTFTs made of the iCVD dielectric layers are demonstrated with various kinds of n‐ and p‐type semiconductors. The superior performance of the iCVD dielectrics will enable the polymer films to play a pivotal role in developing various types of future organic electronic devices.