MHz‐Range Fully Printed High‐Performance Thin‐Film Transistors by Using High‐Resolution Gravure‐Printed Lines | Zendy

Kitsomboonloha Rungrot | Zendy; Kang Hongki | Zendy; Grau Gerd | Zendy; Scheideler William | Zendy; Subramanian Vivek | Zendy

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MHz‐Range Fully Printed High‐Performance Thin‐Film Transistors by Using High‐Resolution Gravure‐Printed Lines

Author(s) -

Kitsomboonloha Rungrot,

Kang Hongki,

Grau Gerd,

Scheideler William,

Subramanian Vivek

Publication year - 2015

Publication title -

advanced electronic materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.25

H-Index - 56

ISSN - 2199-160X

DOI - 10.1002/aelm.201500155

Subject(s) - printed electronics , materials science , thin film transistor , transistor , channel (broadcasting) , optoelectronics , high resolution , capacitance , computer science , electrical engineering , nanotechnology , electrode , telecommunications , engineering , inkwell , voltage , layer (electronics) , composite material , chemistry , remote sensing , geology

High‐performance, highly scaled gravure‐printed organic thin‐film transistors (TFTs) are demonstrated. The process exploits high‐resolution source/drain (S/D) electrodes printed using high‐resolution, high‐speed gravure printing to realize a device architecture that offers high switching speeds due to low overlap capacitance and aggressive channel length scaling, while simultaneously offering good misalignment tolerance. Fully printed TFTs, printed at speeds of ≈0.5 m s −1 , with channel lengths as small as 2.7 μm, are realized, leading to a transition frequency above 1 MHz.

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