Premium
MHz‐Range Fully Printed High‐Performance Thin‐Film Transistors by Using High‐Resolution Gravure‐Printed Lines
Author(s) -
Kitsomboonloha Rungrot,
Kang Hongki,
Grau Gerd,
Scheideler William,
Subramanian Vivek
Publication year - 2015
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201500155
Subject(s) - printed electronics , materials science , thin film transistor , transistor , channel (broadcasting) , optoelectronics , high resolution , capacitance , computer science , electrical engineering , nanotechnology , electrode , telecommunications , engineering , inkwell , voltage , layer (electronics) , composite material , chemistry , remote sensing , geology
High‐performance, highly scaled gravure‐printed organic thin‐film transistors (TFTs) are demonstrated. The process exploits high‐resolution source/drain (S/D) electrodes printed using high‐resolution, high‐speed gravure printing to realize a device architecture that offers high switching speeds due to low overlap capacitance and aggressive channel length scaling, while simultaneously offering good misalignment tolerance. Fully printed TFTs, printed at speeds of ≈0.5 m s −1 , with channel lengths as small as 2.7 μm, are realized, leading to a transition frequency above 1 MHz.