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Electronic Origin and Tailoring of Photovoltaic Effect in BiFeO 3 Single Crystals
Author(s) -
Yang Mingmin,
Bhatnagar Akash,
Alexe Marin
Publication year - 2015
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201500139
Subject(s) - photovoltaic system , materials science , situated , band gap , service (business) , engineering physics , optoelectronics , nanotechnology , computer science , electrical engineering , physics , business , engineering , marketing , artificial intelligence
The sub‐band levels situated around 2.2 eV within the band gap are at the electronic origin of the anomalous photo­voltaic effect in BiFeO 3 single crystals. The photovoltaic effect can be effectively tailored by controlling the activity of the sub‐band levels via thermal and electrical treatments.

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