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Solution‐Grown Organic Single‐Crystal Field‐Effect Transistors with Ultrahigh Response to Visible‐Blind and Deep UV Signals
Author(s) -
Wu Gang,
Chen Chen,
Liu Shuang,
Fan Congcheng,
Li Hanying,
Chen Hongzheng
Publication year - 2015
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201500136
Subject(s) - materials science , optoelectronics , visible spectrum , photodetector , transistor , field effect transistor , dark current , crystal (programming language) , voltage , electrical engineering , programming language , computer science , engineering
Visible‐light transparent 2,7‐dioctyl[1]benzothieno[3,2‐b][1]benzothiophene (C8‐BTBT) single crystal ribbons prepared by low‐cost solution process are applied as the channel layer of the UV active field‐effect transistor. The device exhibits ultrahigh response to visible‐blind and deep UV signals because of the good charge transport ability of the C8‐BTBT single‐crystals. In the case of very weak 365 nm UV lamination (0.2 mW cm −2 ), the photo to dark current ratio ( P ) and photoresponsivity ( R ) reach to 3.0 × 10 4 and 1200 A W −1 at V g = −23 V, V ds = −30 V. When 1 mW cm −2 280 nm deep UV light is applied, the P and R value is 8300 and 44 A W −1 , respectively. The result is the highest record in the organic UV photodetectors ever reported. This work offers the possibility of fabricating a high‐performance, low‐energy exhaust UV sensor free of visible‐light interference or UV controlled memory device, and opens a practical avenue for the realization of sensitive detection of deep UV signals.