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Modulation of Metal–Insulator Transition in VO 2 by Electrolyte Gating‐Induced Protonation
Author(s) -
Shibuya Keisuke,
Sawa Akihito
Publication year - 2016
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201500131
Subject(s) - protonation , gating , electrolyte , materials science , metal , doping , nanotechnology , chemical physics , optoelectronics , ion , chemistry , physics , electrode , quantum mechanics , metallurgy , physiology , biology
Protonation into VO 2 by means of the electrolyte‐gating technique and its use in reversible control of the electronic states are demonstrated. Protonation causes both a lattice deformation and electron doping in VO 2 ; these suppress the metal–insulator transition and stabilize the metallic phase. The finding provides clues to understanding the mechanism of electrolyte gating in metal oxides.