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Ligand‐Induced Control of Photoconductive Gain and Doping in a Hybrid Graphene–Quantum Dot Transistor
Author(s) -
Turyanska Lyudmila,
Makarovsky Oleg,
Svatek Simon A.,
Beton Peter H.,
Mellor Christopher J.,
Patanè Amalia,
Eaves Laurence,
Thomas Neil R.,
Fay Michael W.,
Marsden Alexander J.,
Wilson Neil R.
Publication year - 2015
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201500062
Subject(s) - materials science , quantum dot , photoconductivity , graphene , doping , transistor , optoelectronics , ligand (biochemistry) , graphene quantum dot , nanotechnology , electrical engineering , receptor , biochemistry , chemistry , engineering , voltage
In graphene devices decorated with a layer of near‐infrared colloidal PbS quantum dots (QDs) , the choice of the QD capping ligands and the integrity of the QD layer have a strong influence on the doping, carrier mobility, and photoresponse. By using short (<1 nm) capping ligands, the photoresponsivity of the graphene devices is enhanced up to 10 9 A W −1 .