Premium
Bias Polarity‐Induced Transformation of Point Contact Resistive Switching Memory from Single Transparent Conductive Metal Oxide Layer
Author(s) -
Huang JianShiou,
Lin YungChang,
Tsai HungWei,
Yen WenChun,
Chen ChiaWei,
Lee ChiYuan,
Chin TsungShune,
Chueh YuLun
Publication year - 2015
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201500061
Subject(s) - materials science , oxide , electrical conductor , transparent conducting film , layer (electronics) , resistive random access memory , polarity (international relations) , optoelectronics , tin oxide , indium tin oxide , resistive touchscreen , nanotechnology , doping , electrode , electrical engineering , metallurgy , composite material , chemistry , engineering , biochemistry , cell
Bias polarity‐induced transformation of point contact resistive switching memory from a single transparent conductive metal oxide layer is demonstrated on three kinds of transparent conductive oxide (TCO) layers, including indium tin oxide, fluorine‐doped tin oxide, and aluminum‐doped zinc oxide, as conducting electrode and memristive material by the controllably electrical field simultaneously.