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Nanoscale Cross‐Point Resistive Switching Memory Comprising p‐Type SnO Bilayers
Author(s) -
Hota Mrinal K.,
Hedhili Mohamed N.,
Wang Qingxiao,
Melnikov Vasily A.,
Mohammed Omar F.,
Alshareef Husam N.
Publication year - 2015
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201400035
Subject(s) - homojunction , materials science , resistive random access memory , bilayer , nanoscopic scale , optoelectronics , oxygen , nanotechnology , oxide , voltage , doping , electrical engineering , chemistry , membrane , biochemistry , organic chemistry , metallurgy , engineering
Reproducible low‐voltage bipolar resistive switching is reported in bilayer structures of p‐type SnO films. Specifically, a bilayer homojunction comprising SnO x (oxygen‐rich) and SnO y (oxygen‐deficient) in nanoscale cross‐point (300 × 300 nm 2 ) architecture with self‐compliance effect is demonstrated. By using two layers of SnO film, a good memory performance is obtained as compared to the individual oxide films. The memory devices show resistance ratio of 10 3 between the high resistance and low resistance states, and this difference can be maintained for up to 180 cycles. The devices also show good retention characteristics, where no significant degradation is observed for more than 10 3 s. Different charge transport mechanisms are found in both resistance states, depending on the applied voltage range and its polarity. The resistive switching is shown to originate from the oxygen ion migration and subsequent formation/rupture of conducting filaments.