pn‐Heterojunction Diodes with n‐Type In 2 O 3 | Zendy

von Wenckstern Holger | Zendy; Splith Daniel | Zendy; Lanzinger Stefan | Zendy; Schmidt Florian | Zendy; Müller Stefan | Zendy; Schlupp Peter | Zendy; Karsthof Robert | Zendy; Grundmann Marius | Zendy

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pn‐Heterojunction Diodes with n‐Type In 2 O 3

Author(s) -

von Wenckstern Holger,

Splith Daniel,

Lanzinger Stefan,

Schmidt Florian,

Müller Stefan,

Schlupp Peter,

Karsthof Robert,

Grundmann Marius

Publication year - 2015

Publication title -

advanced electronic materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.25

H-Index - 56

ISSN - 2199-160X

DOI - 10.1002/aelm.201400026

Subject(s) - materials science , non blocking i/o , amorphous solid , diode , heterojunction , rectification , band gap , pulsed laser deposition , doping , oxide , thermal stability , analytical chemistry (journal) , optoelectronics , crystallography , nanotechnology , thin film , chemical engineering , metallurgy , biochemistry , chemistry , power (physics) , physics , chromatography , quantum mechanics , engineering , catalysis

pn‐Heterodiodes comprising the wide bandgap semiconducting oxide In 2 O 3 and amorphous p‐conducting NiO or ZnCo 2 O 4 are realized. In 2 O 3 is grown at 600 °C and the amorphous p‐type oxides at room temperature by pulsed‐laser deposition. Highest rectification of about four orders of magnitude is observed for structures with Mg‐doped In 2 O 3 layers having lower carrier density than undoped layers. The p‐ZnCo 2 O 4 /n‐In 2 O 3 diodes do not show degradation at elevated temperatures of 150 °C, whereas the p‐NiO/n‐In 2 O 3 diodes degrade irreversibly for T > 100 °C. Thermal admittance spectroscopy revealed shallow defect levels in the In 2 O 3 layer with activation energy of about 12 and 250 meV, respectively.

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