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pn‐Heterojunction Diodes with n‐Type In 2 O 3
Author(s) -
von Wenckstern Holger,
Splith Daniel,
Lanzinger Stefan,
Schmidt Florian,
Müller Stefan,
Schlupp Peter,
Karsthof Robert,
Grundmann Marius
Publication year - 2015
Publication title -
advanced electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.25
H-Index - 56
ISSN - 2199-160X
DOI - 10.1002/aelm.201400026
Subject(s) - materials science , non blocking i/o , amorphous solid , diode , heterojunction , rectification , band gap , pulsed laser deposition , doping , oxide , thermal stability , analytical chemistry (journal) , optoelectronics , crystallography , nanotechnology , thin film , chemical engineering , metallurgy , biochemistry , chemistry , power (physics) , physics , chromatography , quantum mechanics , engineering , catalysis
pn‐Heterodiodes comprising the wide bandgap semiconducting oxide In 2 O 3 and amorphous p‐conducting NiO or ZnCo 2 O 4 are realized. In 2 O 3 is grown at 600 °C and the amorphous p‐type oxides at room temperature by pulsed‐laser deposition. Highest rectification of about four orders of magnitude is observed for structures with Mg‐doped In 2 O 3 layers having lower carrier density than undoped layers. The p‐ZnCo 2 O 4 /n‐In 2 O 3 diodes do not show degradation at elevated temperatures of 150 °C, whereas the p‐NiO/n‐In 2 O 3 diodes degrade irreversibly for T > 100 °C. Thermal admittance spectroscopy revealed shallow defect levels in the In 2 O 3 layer with activation energy of about 12 and 250 meV, respectively.