Open AccessPressure‐Induced Indirect‐Direct Bandgap Transition of CsPbBr 3 Single Crystal and Its Effect on Photoluminescence Quantum Yield (Adv. Sci. 29/2022)
Author(s) -
Gong Junbo,
Zhong Hongxia,
Gao Chan,
Peng Jiali,
Liu Xinxing,
Lin Qianqian,
Fang Guojia,
Yuan Shengjun,
Zhang Zengming,
Xiao Xudong
Publication year - 2022
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.202270186
Subject(s) - photoluminescence , band gap , materials science , diamond anvil cell , perovskite (structure) , quantum yield , single crystal , optoelectronics , yield (engineering) , crystal (programming language) , direct and indirect band gaps , condensed matter physics , nanotechnology , high pressure , optics , chemistry , crystallography , engineering physics , physics , computer science , composite material , programming language , fluorescence
CsPbBr 3 Single Crystal High pressure exerted on CsPbBr 3 single crystal using diamond anvil cell leads to improved photoluminescence intensity due to the decreased dynamic Rashba splitting. Application of higher pressure transforms it into a pure indirect bandgap phase, which can be maintained at near‐ambient pressure. These phenomena provide a novel framework to understand the optoelectronic properties of perovskite materials. More details can be found in article number 2201554 by Junbo Gong, Zengming Zhang, Xudong Xiao, and co‐workers.